Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS
نویسندگان
چکیده
منابع مشابه
Low-frequency noise in hot-carrier degraded nMOSFETs
This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deu...
متن کاملNovel trends in SOI: UTBOX SOI and direct silicon bonding technologies
Recent trends in device design bring a need for SOI wafers with ultra thin BOX below 100A. Difficulties in production of UTBOX SOI wafer by the Smart CutTM technology are highlighted. New process of internal BOX dissolution allows to overcome interface defectivity problems and results in high quality UTBOX and DSB wafers. Mechanism of internal BOX dissolution is presented together with the resu...
متن کاملElectrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method
The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (1 1 0) crystal orientation layer bonded to a bulk (1 0 0) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. However, the material quality of nMOSFETs regions, which has been undergone amorphization/templated recrystallizatio...
متن کاملImpact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
This study investigates the effects of oxide traps induced by SOI of various thicknesses (TSOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained SOI MOSFETs capped with different stressed SiN contact-etch-stop-layer (CESL). The effects of different stress CESLs on the gate leakage currents of the SOI MOSFET devices are also in...
متن کاملGate and drain low frequency noise in HfO2 NMOSFETs
Gate and drain current noise investigations are performed on nMOS transistors with HfO2 gate oxides. The drain noise magnitude allows extraction of the slow oxide trap density Nt(EF) ranging from 3 to 7 10 eV cm. These values are about 50 times higher than for SiO2 dielectrics. The 1/f gate current noise component is a quadratic function of the gate leakage current. The gate noise parameter KGC...
متن کامل